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mos integrated circuit m PD23C16000W description the m PD23C16000W is a 16,777,216 bits mask-programmable rom. the word organization is selectable (byte mode: 2,097,152 words by 8 bits, word mode: 1,048,576 words by 16 bits). the active levels of oe (output enable input) can be selected with mask-option. the m PD23C16000W are packed in 42-pin plastic dip, 44-pin plastic sop, 48-pin plastic tsop (i) and 44-pin plastic tsop (ii). features ? word organization 2,097,152 words by 8 bits (byte mode) 1,048,576 words by 16 bits (word mode) ? access time 120 ns (max.) ? low current consumption active 70 ma (max.) standby 100 m a (max.) (cmos level input) ordering information part number package m PD23C16000Wcz-xxx 42-pin plastic dip (600 mil) m PD23C16000Wgx-xxx 44-pin plastic sop (600 mil) m PD23C16000Wgy-xxx-mjh 48-pin plastic tsop (i) (12 18 mm) (normal bent) m PD23C16000Wgy-xxx-mkh 48-pin plastic tsop (i) (12 18 mm) (reverse bent) m PD23C16000Wg5-xxx-7jf 44-pin plastic tsop (ii) (400 mil) (normal bent) (xxx: rom code suffix no.) the information in this document is subject to change without notice. 16m-bit mask-programmable rom 2m-word by 8-bit (byte mode)/1m-word by 16-bit (word mode) the mark shows major revised points. document no. m10447ej3v1ds00 (3rd edition) date published february 1998 n cp(k) printed in japan 1995 data sheet
m PD23C16000W 2 pin configuration (marking side) 42-pin plastic dip (600 mil) 44-pin plastic sop (600 mil) [ m PD23C16000Wcz ][ m PD23C16000Wgx ] a0-a19 : address inputs o0-07, o8-o14: data outputs o15/aC1 : data 15 ouput (word mode)/lsb address input (byte mode) word/byte : mode select ce : chip enable oe/oe : output enable v cc : supply voltage gnd : ground nc note 1 : no connection ic note 2 : internal connection dc : dont care notes 1. some signal can be applied because this pin is not connected to the inside of the chip. 2. leave this pin unconnected or connect to gnd. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 16 17 15 19 18 20 21 42 41 40 39 38 37 36 35 34 33 32 31 30 29 27 26 28 24 25 23 22 a18 a17 a7 a6 a5 a4 a3 a2 a1 a0 ce gnd oe/oe/dc o0 o1 o9 o8 o10 o2 o3 o11 a19 a8 a9 a10 a11 a12 a13 a14 a15 a16 word/byte gnd o15/a? o7 o6 o13 o14 o12 o5 o4 v cc 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 nc a18 a17 a7 a6 a5 a4 a3 a2 a1 a0 ce gnd oe/oe/dc o0 o8 o1 o9 o2 o10 o3 o11 nc a19 a8 a9 a10 a11 a12 a13 a14 a15 a16 word/byte gnd o15/a? o7 o14 o6 o13 o5 o12 o4 v cc
m PD23C16000W 3 48-pin plastic tsop (i) (12 18 mm) (reverse bent) [ m PD23C16000Wgy-mjh ] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 word/byte a16 a15 a14 a13 a12 a11 a10 a9 a8 a19 ic nc a18 a17 a7 a6 a5 a4 a3 a2 a1 a0 ce gnd gnd o15/a? o7 o14 o6 o13 o5 o12 o4 v cc v cc ic o11 o3 o10 o2 o9 o1 o8 o0 oe/oe/dc gnd gnd 48-pin plastic tsop (i) (12 18 mm) (reverse bent) [ m PD23C16000Wgy-mkh ] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 gnd gnd o15/a? o7 o14 o6 o13 o5 o12 o4 v cc v cc ic o11 o3 o10 o2 o9 o1 o8 o0 oe/oe/dc gnd gnd word/byte a16 a15 a14 a13 a12 a11 a10 a9 a8 a19 ic nc a18 a17 a7 a6 a5 a4 a3 a2 a1 a0 ce
m PD23C16000W 4 44-pin plastic tsop (ii) (400 mil) (normal bent) [ m PD23C16000Wg5-7jf ] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 nc a18 a17 a7 a6 a5 a4 a3 a2 a1 a0 ce gnd oe/oe/dc o0 o8 o1 o9 o2 o10 o3 o11 nc a19 a8 a9 a10 a11 a12 a13 a14 a15 a16 word/byte gnd o15/a? o7 o14 o6 o13 o5 o12 o4 v cc
m PD23C16000W 5 input/output pin functions pin name input/ function output word/byte input the pin for switching word mode and byte mode. high level word mode (1m-word by 16 bits) low level byte mode (2m-word by 8 bits) a0 to a19 address bus. a0 to a19 are used differently in the word mode (1m-word by 16 bits) (address input) and the byte mode (2m-word by 8 bits). word mode a0 to a19 are used as 20 bits address signals. byte mode a0 to a19 are used as the upper 20 bits of total 21 bits of address signal. (the least significant bit (aC1) is combined to o15.) o0 to o7, o8 to o14 output output data bus. o0 to o7, o8 to o14 are used differently in the word (1m-word by (data output) 16 bits) and the byte mode (2m-word by 8 bits). word mode the lower 15 bits of 16 bits data outputs to o0 to o14. (the most significant bit (o15) combined to aC1.) byte mode 8 bits data outputs to o0 to o7 and also o8 to o14 is high impedance. o15/aC1 output o15/aC1 are used differently in the word (1m-word by 16 bits) and the byte mode (data output 15)/ / (2m-word by 8 bits). (lsb address input) input word mode the most significant output data bus (o15). byte mode the least significant address bus (aC1). ce input chip activating signal. (chip enable) when the oe is active, output states are followings. high level high impedance low level data out oe/oe/dc output enable signal. the active level of oe is mask option. the active level of oe (output enable/dont care) can be selected from high active, low active and dont care at order. v cc supply voltage gnd ground nc not internally connected. (the signal can be connected.) ic internally connected. (leave this pin unconnected or connect to gnd.)
m PD23C16000W 6 block diagram a0 a1 a2 a3 a4 a5 a6 a7 a8 a9 a10 a11 a12 a13 a14 a15 a16 a17 a18 a19 o0 o1 o2 o3 o4 o5 o6 o7 o8 o9 o10 o11 o12 o13 o14 o15/a? word/byte oe/oe/dc ce output buffer y-selector memory cell matrix 1,048,576 by 16 bits/2,097,152 by 8bits address input buffer x-decoder logic/input input buffer y-decoder
m PD23C16000W 7 mask option the active levels of output enable pin (oe/oe/dc) are mask programmable and optional, and can be selected from among 0 1 shown in the table below. option oe/oe/dc oe active level 0oe l 1oe h dc dont care operation modes for each option are shown in the tables below. operation mode (option: 0) ce oe mode output state l l active data out h high impedance h h or l standby high impedance operation mode (option: 1) ce oe mode output state l l active high impedance h data out h h or l standby high impedance operation mode (option: ) ce dc mode output state l h or l active data out h h or l standby high impedance remark l: low level input h: high level input
m PD23C16000W 8 electrical specifications absolute maximum ratings parameter symbol conditions ratings unit supply voltage v cc C0.3 to +7.0 v input voltage v i C0.3 to v cc +0.3 v output voltage v o C0.3 to v cc +0.3 v operating ambient temperature t a C10 to +70 ?c storage temperature t stg C65 to +150 ?c caution exposing the device to stress above those listed in absolute maximum ratings could cause permanent damage. the device is not meant to be operated under conditions outside the limits described in the operational sections of this specification. exposure to absolute maximum rating conditions for extended periods may affect device reliability. capacitance (t a = 25 ?c) parameter symbol test conditions min. typ. max. unit input capacitance c i f = 1 mhz 10 pf output capacitance c o 12 pf dc characteristics (t a = C10 to +70 ?c, v cc = 5 v 10 %) parameter symbol test conditions min. typ. max. unit high level input voltage v ih 2.2 v cc +0.3 v low level input voltage v il C0.3 +0.8 v high level output voltage v oh1 i oh = C400 m a 2.4 v v oh2 i oh = C100 m av cc C0.5 low level output voltage v ol i ol = 2.1 ma 0.4 v input leakage current i li v i = 0 to v cc C10 +10 m a output leakage current i lo v o = 0 to v cc , chip deselected C10 +10 m a power supply current i cc1 ce = v il (active mode), i o = 0 ma 70 ma standby current i cc2 ce = v ih (standby mode) 1.5 ma i cc3 ce = v cc C0.2 v (standby mode) 100 m a
m PD23C16000W 9 ac characteristics (t a = C10 to +70 ?c, v cc = 5 v 10 %) parameter symbol test conditions min. typ. max. unit address access time t acc 120 ns chip enable access time t ce 120 ns output enable access time t oe 50 ns output hold time t oh 0ns output disable time t df 025ns word/byte access time t wb 120 ns remark t df is the time from inactivation of ce or oe/oe to high-impedance state output. ac test conditions input waveform (rise/fall time 5 ns) 2.0 v 0.8 v 2.0 v 0.8 v test points output waveform 2.0 v 0.8 v 2.0 v 0.8 v test points output load 1ttl + 100 pf
m PD23C16000W 10 read cycle timing chart a0 to a19, a ?1 note 1 (input) o0 to o7, note 3 o8 to o15 (output) ce (input) oe/oe (input) t acc t ce t oe t df note 2 t oh data out high impedance notes 1. during word mode, aC1 is o15. 2. t df is specified when the one of ce, oe or oe is inactivated. 3. during byte mode, o8 to o14 are high impedance and o15 is aC1. word/byte switch timing chart data out a ?1 (input) word/byte (input) high impedance high impedance data out data out high impedance o0 to o7 (output) o8 to o15 (output) t oh t acc t oh t wb data out data out t df remark oe/oe, ce: active.
m PD23C16000W 11 notice of change in 48-pin tsop (i) standoff height we are changing the 48-pin tsop (i) standoff height 0.05 0.05 mm (low standoff height) to 0.1 0.05 mm (high standoff height). each lot version is identified by the fifth character of the lot number. difference between high standoff height and low standoff height detail of lead end normal bent reverse bent q high standoff height: q = 0.1 ?.05 mm low standoff height: q = 0.05 ?.05 mm q identification of each lot version each lot version is identified by the fifth character of the lot number. fifth character of the lot number lot version standoff height l l version 0.1 0.05 mm (high standoff height) k k version 0.05 0.05 mm (low standoff height) marking example japan lot number d23cxxxxx xxxx xxxx
m PD23C16000W 12 package drawings 42pin plastic dip (600 mil) item millimeters inches notes 1) each lead centerline is located within 0.25 mm (0.01 inch) of its true position (t.p.) at maximum material condition. n 0.25 0.01 a 55.88 max. 2.200 max. b 2.54 max. 0.100 max. f 1.2 min. 0.047 min. g 3.6?.3 0.142?.012 j 5.72 max. 0.226 max. k 15.24 (t.p.) 0.600 (t.p.) c 2.54 (t.p.) 0.100 (t.p.) d 0.50?.10 0.020 +0.004 ?.005 h 0.51 min. 0.020 min. i 4.31 max. 0.170 max. l 13.2 0.520 m 0.25 0.010 +0.004 ?.003 +0.10 ?.05 m r m i h g f dn c b k p42c-100-600a,b-1 r 0~15? 0~15? 2) ltem "k" to center of leads when formed parallel. l a j 121 42 22
m PD23C16000W 13 ns c d m m 44 23 122 p f g e b l k j detail of lead end 44 pin plastic sop (600 mil) note 2. each lead centerline is located within 0.12 mm (0.005 inch) of its true position (t.p.) at maximum material condition. p44gx-50-600a-3 item millimeters inches a b c d e f g h i j 1.27 (t.p.) 3.0 max. 2.7?.05 16.04?.3 0.78 max. k l 0.12 0.8?.2 1.4?.2 13.24?.1 0.22 m 0.10 0.42 0.15?.1 n +0.08 ?.07 +7 ? +7 ? 0.031 max. 0.017 0.006?.004 0.119 max. 0.106 0.631 0.521 0.055?.008 0.009 0.031 0.005 0.004 +0.009 ?.008 0.050 (t.p.) p3 3 +0.003 ?.004 +0.003 ?.002 +0.013 ?.012 +0.005 ?.004 +0.003 ?.004 27.83 1.096 +0.016 ?.003 +0.4 ?.05 +0.08 ?.07 1. controlling dimension millimeter. s a h i
m PD23C16000W 14 l version: high standoff height notes 48 pin plastic tsop ( i ) (12 18) item millimeters inches a b c e i 12.0?.1 0.5 (t.p.) 0.1?.05 0.45 max. k 1.2 max. 16.4?.1 0.145?.05 f 0.10 m 0.472 0.018 max. 0.004?.002 0.646 0.006 0.048 max. 0.004 0.020 (t.p.) d 0.22?.05 0.009 2. each lead centerline is located within 0.10 mm (0.004 inch) of its true position (t.p.) at maximum material condition. 3. "a" excludes mold flash. (includes mold flash : 12.4 mm max. <0.489 inch max.>) c r d k m m l +0.002 ?.003 1.0?.05 g 0.039 +0.003 ?.002 +0.004 ?.005 l 0.5 0.020 0.10 n 0.004 p 18.0?.2 0.709 +0.008 ?.009 q3 3 +5 ? +5 ? 0.25 r 0.010 s48gy-50-mjh1 s 0.60?.15 0.024 +0.006 ?.007 +0.002 ?.003 j 0.8?.2 0.031 +0.009 ?.008 +0.005 ?.004 1 24 48 25 s q s n i p b e g f a j detail of lead end s 1. controlling dimension millimeter.
m PD23C16000W 15 l version: high standoff height notes 48 pin plastic tsop ( i ) (12 18) item millimeters inches a b c e i 12.0?.1 0.5 (t.p.) 0.1?.05 0.45 max. k 1.2 max. 16.4?.1 f 0.10 m 0.472 0.018 max. 0.004?.002 0.646 0.048 max. 0.004 0.020 (t.p.) d 0.22?.05 0.009 2. each lead centerline is located within 0.10 mm (0.004 inch) of its true position (t.p.) at maximum material condition. 3. "a" excludes mold flash. (includes mold flash : 12.4 mm max. <0.489 inch max.>) c b r k d m m +0.002 ?.003 1.0?.05 g 0.039 +0.003 ?.002 +0.004 ?.005 l 0.5 0.020 0.10 n 0.004 p 18.0?.2 0.709 +0.008 ?.009 q3 3 +5 ? +5 ? 0.25 r 0.010 s48gy-50-mkh1 s 0.60?.15 0.024 +0.006 ?.007 j 0.8?.2 0.031 +0.009 ?.008 0.145?.05 0.006 +0.002 ?.003 +0.005 ?.004 1 24 48 25 s n a i p j g f l s q e detail of lead end s 1. controlling dimension millimeter.
m PD23C16000W 16 k version: low standoff height 48 pin plastic tsop ( i ) (12x18) s48gy-50-mjh-3 item millimeters inches d i 16.4?.1 0.646 +0.004 ?.005 k 0.145 0.006 l 0.5?.1 0.020 +0.004 ?.005 detail of lead end r c b b c 0.5 (t.p.) 0.45 max. 0.018 max. 0.020 (t.p.) g 0.97 0.038 j 0.8?.2 0.031 +0.009 ?.008 q 0.05?.05 0.002?.002 +0.03 ?.055 m m q g l k j h 17.0?.2 0.669 m n 0.10 0.08 0.003 0.004 p 18.0?.2 0.709 +0.008 ?.009 a 12.0?.1 0.472 +0.005 ?.004 n s r2 +4 ? 2 +4 ? +0.009 ?.008 d 0.22 0.009 +0.003 ?.004 +0.08 ?.07 +0.001 ?.003 s 1.02?.08 0.040 +0.004 ?.003 notes 1. controlling dimension millimeter. 2. each lead centerline is located within 0.08 mm (0.003 inch) of its true position (t.p.) at maximum material condition. 3. "a" exciudes mold flash. (includes mold flash : 12.4 mm max. < 0.489 inch max. > ) s 1 24 48 25 p i h s a
m PD23C16000W 17 k version: low standoff height 48 pin plastic tsop ( i ) (12x18) item millimeters inches i 16.4?.1 0.646 +0.004 ?.005 k 0.145 0.006 l 0.5?.1 0.020 +0.004 ?.005 detail of lead end r c b b c 0.5 (t.p.) 0.45 max. 0.018 max. 0.020 (t.p.) g 0.97 0.038 j 0.8?.2 0.031 +0.009 ?.008 q 0.05?.05 0.002?.002 +0.03 ?.055 q g l k j h 17.0?.2 0.669 m n 0.10 0.08 0.003 0.004 p 18.0?.2 0.709 +0.008 ?.009 a 12.0?.1 0.472 +0.005 ?.004 n r2 +4 ? 2 +4 ? +0.009 ?.008 s d m m d 0.22 0.009 +0.003 ?.004 +0.08 ?.07 +0.001 ?.003 s48gy-50-mkh-3 s 1.02?.08 0.040 +0.004 ?.003 notes 1. controlling dimension millimeter. 2. each lead centerline is located within 0.08 mm (0.003 inch) of its true position (t.p.) at maximum material condition. 3. "a" exciudes mold flash. (includes mold flash : 12.4 mm max. < 0.489 inch max. > ) 1 24 48 25 s s a h p i
m PD23C16000W 18 44 pin plastic tsop(ii) (400 mil) d m m n c b g f e p l k h i j 44 23 122 a item millimeters inches a b c e f g i 18.63 max. 0.8 (t.p.) 1.2 max. 0.97 0.93 max. m n 0.10 10.16?.1 0.13 0.1?.05 0.734 max. 0.037 max. 0.004?.002 0.048 max. 0.038 0.400?.004 0.005 0.004 0.031 (t.p.) h 11.76?.2 0.463?.008 note each lead centerline is located within 0.13 mm (0.005 inch) of its true position (t.p.) at maximum material condition. d 0.32 0.013?.003 j 0.8?.2 0.031 +0.009 ?.008 k 0.145 0.006?.001 l 0.5?.1 0.020 +0.004 ?.005 s44g5-80-7jf5 p3? +7? ?? +0.025 ?.015 +0.08 ?.07 3? +7? ?? detail of lead end
m PD23C16000W 19 recommended soldering conditions the following conditions (see table below) must be met when soldering the m PD23C16000W. for more details, refer to our document semiconductor device mounting technology manual (c10535e) . please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. types of surface mount device m PD23C16000Wgx : 44-pin plastic sop (600 mil) m PD23C16000Wgy-mjh : 48-pin plastic tsop (i) (12 18 mm) (normal bent) m PD23C16000Wgy-mkh : 48-pin plastic tsop (i) (12 18 mm) (reverse bent) m PD23C16000Wg5-7jf : 44-pin plastic tsop (ii) (400 mil) (normal bent) please consult with our sales offices. type of through hole mount device m PD23C16000Wcz : 42-pin plastic dip (600 mil) soldering process soldering conditions wave soldering solder temperature: 260 ?c or below, (only to leads) flow time: 10 seconds or below partial heating method terminal temperature: 300 ?c or below, time: 3 seconds or below (per one lead) caution do not jet molten solder on the surface of package.
m PD23C16000W 20 [memo]
m PD23C16000W 21 [memo]
m PD23C16000W 22 [memo]
m PD23C16000W 23 notes for cmos devices 1 precaution against esd for semiconductors note: strong electric field, when exposed to a mos device, can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. environmental control must be adequate. when it is dry, humidifier should be used. it is recommended to avoid using insulators that easily build static electricity. semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. all test and measurement tools including work bench and floor should be grounded. the operator should be grounded using wrist strap. semiconductor devices must not be touched with bare hands. similar precautions need to be taken for pw boards with semiconductor devices on it. 2 handling of unused input pins for cmos note: no connection for cmos device inputs can be cause of malfunction. if no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. cmos devices behave differently than bipolar or nmos devices. input levels of cmos devices must be fixed high or low by using a pull-up or pull-down circuitry. each unused pin should be connected to v dd or gnd with a resistor, if it is considered to have a possibility of being an output pin. all handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 status before initialization of mos devices note: power-on does not necessarily define initial status of mos device. production process of mos does not define the initial operation status of the device. immediately after the power source is turned on, the devices with reset function have not yet been initialized. hence, power-on does not guarantee out-pin levels, i/o settings or contents of registers. device is not initialized until the reset signal is received. reset operation must be executed immedi- ately after power-on for devices having reset function.
20 m PD23C16000W [memo] the export of this product from japan is regulated by the japanese government. to export this product may be prohibited without governmental license, the need for which must be judged by the customer. the export or re-export of this product from a country other than japan may also be prohibited without a license from that country. please call an nec sales representative. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 96.5

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